SVG086R0NT Datasheet | Silan Microelectronics

Silan Microelectronics SVG086R0NT(S)(D)(L5)_Datasheet 120A, 80V N-CHANNEL MOSFET DESCRIPTION SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. Features - 120A, 80V, RDS(on)(typ.)=5.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability S1 8D S2 7D S3 6D G4 5D 1.Gate 2.Drain 3.Source 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27...