SVGQ041R0NL5V-2HS Datasheet | Silan Microelectronics

Silan Microelectronics SVGQ041R0NL5V-2HS_Datasheet 230A, 40V N-CHANNEL MOSFET DESCRIPTION S1 8D SVGQ041R0NL5V-2HS is an N-channel enhancement mode power S2 7D MOS field effect transistor which is produced using Silan's LVMOS S3 6D technology. The improved process and cell structure have been G4 5D especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. Features - 230A, 40V, RDS(on)(typ.)=0.7m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant PDFN-8Q-5X6X1.1-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID...