SVGQ042R8NL5V-2HS Datasheet | Silan Microelectronics

Silan Microelectronics SVGQ042R8NL5V-2HS_Datasheet 112A, 40V N-CHANNEL MOSFET DESCRIPTION S1 8D SVGQ042R8NL5V-2HS is an N-channel enhancement mode S2 7D power MOS field effect transistor which is produced using Silan's S3 6D LVMOS technology. The improved process and cell structure have G4 5D been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in 12V automobile motor control system, Start-stop micro-hybrid and so on. Features - pliant with AEC-Q101 standards. - 112A, 40V, RDS(on)(typ.)=2.3m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant - Wettable flanks - Max. junction temperature: Tjmax。=175ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th)...