SVGQ041R2NLS-2HF Description
SVGQ041R2NLS-2HF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance.
SVGQ041R2NLS-2HF Key Features
- pliant with AEC-Q101 standards
- 255A, 40V, RDS(on)(typ.)=1.0m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Extreme dv/dt rated
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant
- Max. junction temperature: Tjmax.=175 ºC