SVGQ041R2NLS-2HF Datasheet | Silan Microelectronics

Silan Microelectronics SVGQ041R2NLS-2HF_Datasheet 255A, 40V N-CHANNEL MOSFET DESCRIPTION SVGQ041R2NLS-2HF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. Features - pliant with AEC-Q101 standards. - 255A, 40V, RDS(on)(typ.)=1.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant - Max. junction temperature: Tjmax.=175 ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 40 2.4~3.4 1.2 255 66 Unit V V m A n C ORDERING INFORMATION Part No. SVGQ041R2NLS-2HFTR Package STOLL-5L Marking Q41R2-2HF Tab Pin5 Pin1-4 Pin5. Gate Tab. Drain Pin1-4....