SVGQ046R8NLPD Datasheet | Silan Microelectronics

Silan Microelectronics SVGQ046R8NLPD_Datasheet 63A, 40V DUAL N-CHANNEL MOSFET DESCRIPTION SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 Features - AEC-Q101 qualified - 63A, 40V, RDS(on)(typ.)=5.6m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant - Max. junction temperature: Tjmax.=175 ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 40 2.4~3.4 6.8 63 18 Unit V V m A n C 123 4 MO-4A-235-1.27 ORDERING INFORMATION Part No. SVGQ046R8NLPDTR Package...