Datasheet Details
| Part number | SVGQ046R8NLPD |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 436.25 KB |
| Description | 40V DUAL N-CHANNEL MOSFET |
| Download | SVGQ046R8NLPD Download (PDF) |
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| Part number | SVGQ046R8NLPD |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 436.25 KB |
| Description | 40V DUAL N-CHANNEL MOSFET |
| Download | SVGQ046R8NLPD Download (PDF) |
|
|
|
SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance.
This device is widely used in power management for UPS and Inverter Systems.
Silan Microelectronics SVGQ046R8NLPD_Datasheet 63A, 40V DUAL N-CHANNEL.
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