SVGQ046R8NLPD Description
SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems.
SVGQ046R8NLPD Key Features
- AEC-Q101 qualified
- 63A, 40V, RDS(on)(typ.)=5.6m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Extreme dv/dt rated
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant
- Max. junction temperature: Tjmax.=175 ºC