SVGQ041R3NL5V-2HS Datasheet | Silan Microelectronics

Silan Microelectronics SVGQ041R3NL5V-2HS_Datasheet 190A, 40V N-CHANNEL MOSFET DESCRIPTION SVGQ041R3NL5V-2HS is an N-channel enhancement mode power S1 8D MOS field effect transistor which is produced using Silan's LVMOS S2 7D technology. The improved process and cell structure have been S3 6D especially tailored to minimize on-state resistance, provide superior G4 5D switching performance and high avalanche breakdown tolerance. This device is widely used in 12V motor control system, Start-stop micro-hybrid and so on. Features - Qualification in accordance with AEC-Q101 - 190A, 40V, RDS(on)(typ.)=1.1m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant - Wettable flanks - Max. junction temperature: Tjmax.=175 ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th)...