SVGQ047R6NL5V-2HS Datasheet | Silan Microelectronics

Silan Microelectronics SVGQ047R6NL5V-2HS_Datasheet 65A, 40V N-CHANNEL MOSFET DESCRIPTION SVGQ047R6NL5V-2HS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in 12V motor control system, Start-stop micro-hybrid and so on. Features - AEC-Q101 qualified - 65A, 40V, RDS(on)(typ.)=5.5m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant - Wettable flanks - Max. junction temperature: Tjmax.=175ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 40 2.4~3.4 7.6 65 15 Unit V V m A n C ORDERING INFORMATION Part No. Package SVGQ047R6NL5V-2HSTR PDFN-8Q-5X6X1.1-1.27 Marking Q47R6-2HS S1 S2 S3...