SVGQ047R6NL5V-2HS Description
SVGQ047R6NL5V-2HS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in 12V motor control system, Start-stop micro-hybrid and so on.
SVGQ047R6NL5V-2HS Key Features
- AEC-Q101 qualified
- 65A, 40V, RDS(on)(typ.)=5.5m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Extreme dv/dt rated
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant
- Wettable flanks