SVGQ06130PD Description
SVGQ06130PD is an P-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems.
SVGQ06130PD Key Features
- pliant with AEC-Q101 standards
- 80A, -60V, RDS(on)(typ.)=8.0m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Extreme dv/dt rated
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant
- Max. junction temperature: Tjmax.=175 ºC