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SVGQ06130PD Datasheet -60V P-CHANNEL MOSFET

Manufacturer: Silan Microelectronics

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Datasheet Details

Part number SVGQ06130PD
Manufacturer Silan Microelectronics
File Size 364.26 KB
Description -60V P-CHANNEL MOSFET
Download SVGQ06130PD Download (PDF)

General Description

SVGQ06130PD is an P-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance.

This device is widely used in power management for UPS and Inverter Systems.

Overview

Silan Microelectronics SVGQ06130PD_Datasheet -80A, -60V P-CHANNEL.

Key Features

  • Compliant with AEC-Q101 standards.
  • -80A, -60V, RDS(on)(typ. )=8.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant.
  • Max. junction temperature: Tjmax. =175 ºC KEY.

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