SVGQ06130PD Datasheet | Silan Microelectronics

Silan Microelectronics SVGQ06130PD_Datasheet -80A, -60V P-CHANNEL MOSFET DESCRIPTION SVGQ06130PD is an P-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. Features - pliant with AEC-Q101 standards. - -80A, -60V, RDS(on)(typ.)=8.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant - Max. junction temperature: Tjmax.=175 ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ. Ratings -60 -1.0~-2.5 13 -80 45 Unit V V m A n C 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L ORDERING INFORMATION Part No. SVGQ06130PDTR Package...