SVGQ109R5NAD Description
SVGQ109R5NAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems.
SVGQ109R5NAD Key Features
- 94A, 100V, RDS(on)(typ.)=7.2m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Extreme dv/dt rated
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant
- Max. junction temperature: Tjmax。=175 ºC