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SVGQ109R5NAD Datasheet 100V N-CHANNEL MOSFET

Manufacturer: Silan Microelectronics

Download the SVGQ109R5NAD datasheet PDF. This datasheet also includes the SVGQ109R5NAD-SilanMicroelectronics variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVGQ109R5NAD-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVGQ109R5NAD
Manufacturer Silan Microelectronics
File Size 410.32 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVGQ109R5NAD Datasheet

General Description

SVGQ109R5NAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance.

This device is widely used in power management for UPS and Inverter Systems.

Overview

Silan Microelectronics SVGQ109R5NAD_Datasheet 94A, 100V N-CHANNEL.

Key Features

  • 94A, 100V, RDS(on)(typ. )=7.2m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant.
  • Max. junction temperature: Tjmax。=175 ºC KEY.

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