SVGQ109R5NAD Datasheet | Silan Microelectronics

Silan Microelectronics SVGQ109R5NAD_Datasheet 94A, 100V N-CHANNEL MOSFET DESCRIPTION SVGQ109R5NAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. 1 3 1.Gate 2.Drain 3.Source Features - 94A, 100V, RDS(on)(typ.)=7.2m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant - Max. junction temperature: Tjmax。=175 ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 100 1.4~2.4 9.5 94 49 Unit V V m A n C 1 3 TO-252-2L ORDERING INFORMATION Part No. SVGQ109R5NADTR Package TO-252-2L Marking...