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SVS47N60PN - 600V DP MOS POWER TRANSISTOR

Description

SVS47N60PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Features

  • 47A, 600V, RDS(on)(typ. )=55m@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 1 23 TO-3P.

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Datasheet preview – SVS47N60PN

Datasheet Details

Part number SVS47N60PN
Manufacturer Silan Microelectronics
File Size 372.68 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS47N60PN Datasheet
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Full PDF Text Transcription

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SVS47N60PN_Datasheet 47A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS47N60PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  47A, 600V, RDS(on)(typ.)=55m@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 1 23 TO-3P ORDERING INFORMATION Part No.
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