SVS4N65F Datasheet | Silan Microelectronics

Silan Microelectronics SVS4N65F/MJ/D_Datasheet 4A, 650V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L Features - 4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Extreme dv/dt rated - High peak current capability TO-220F-3L TO-251J-3L ORDERING INFORMATION Part No. SVS4N65F SVS4N65MJ SVS4N65D SVS4N65DTR Package TO-220F-3L TO-251J-3L TO-252-2L TO-252-2L Marking SVS4N65F SVS4N65MJ SVS4N65D SVS4N65D Material Halogen free Halogen free Halogen free...