Datasheet4U Logo Datasheet4U.com

SVS4N65D - TRANSISTOR

This page provides the datasheet information for the SVS4N65D, a member of the SVS4N65F TRANSISTOR family.

Description

SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Extreme dv/dt rated.
  • High peak current capability 123 TO-220F-3L 123 TO-251J-3L.

📥 Download Datasheet

Datasheet preview – SVS4N65D

Datasheet Details

Part number SVS4N65D
Manufacturer Silan Microelectronics
File Size 357.35 KB
Description TRANSISTOR
Datasheet download datasheet SVS4N65D Datasheet
Additional preview pages of the SVS4N65D datasheet.

📁 Similar Datasheet

  • SVSP65R110FJDHD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)
  • SVSP65R110LHD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)
  • SVSP65R110P7HD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)
  • SVSP65R110SHD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)
  • SVSP65R110THD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)
Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
Silan Microelectronics SVS4N65F/MJ/D_Datasheet 4A, 650V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L FEATURES  4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Extreme dv/dt rated  High peak current capability 123 TO-220F-3L 123 TO-251J-3L ORDERING INFORMATION Part No.
Published: |