SVS4N80T Datasheet | Silan Microelectronics

Silan Microelectronics SVS4N80D/T_Datasheet 4A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS4N80D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 1 3 1.Gate 2.Drain 3.Source Features - 4A,800V, RDS(on)(typ.)=1.1Ω@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability TO-220-3L TO-252-2L ORDERING INFORMATION Part No. SVS4N80D SVS4N80DTR SVS4N80T Package TO-252-2L TO-252-2L TO-220-3L Marking SVS4N80D SVS4N80D SVS4N80T Material Halogen free Halogen free Halogen free Packing Tube Tape & Reel Tube ABSOLUTE...