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SVS4N80T - TRANSISTOR

This page provides the datasheet information for the SVS4N80T, a member of the SVS4N80D TRANSISTOR family.

Description

SVS4N80D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 4A,800V, RDS(on)(typ. )=1.1Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 123 TO-220-3L TO-252-2L.

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Datasheet preview – SVS4N80T

Datasheet Details

Part number SVS4N80T
Manufacturer Silan Microelectronics
File Size 374.13 KB
Description TRANSISTOR
Datasheet download datasheet SVS4N80T Datasheet
Additional preview pages of the SVS4N80T datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVS4N80D/T_Datasheet 4A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS4N80D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  4A,800V, RDS(on)(typ.)=1.1Ω@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 123 TO-220-3L TO-252-2L ORDERING INFORMATION Part No.
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