SVS4N65MJ Description
SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
SVS4N65MJ Key Features
- 4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability