ST2303SRG Datasheet PDF | Stanson Technology

Stanson Technology ST2303SRG

ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.

Part No.	ST2303SRG
Datasheet	ST2303SRG Download
Manufacturer	Stanson Technology
Description	P-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE -30V/-2.6A, RDS(ON) = 95m-ohm (Typ.) @VGS = -10V -30V/-2.0A, RDS(ON) = 125m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 S03YA 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2303SRG 2005. Rev.1 ST2303SRG P Channel Enhancement Mode MOSFET -2.6A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID IDM -30 ±20 -2.6 -2.0 -10 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ -1.25 1.25 0.8 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 100 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2303SRG 2005.