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STC4539S8TG - N&P Pair Enhancement Mode MOSFET

Download the STC4539S8TG datasheet PDF. This datasheet also covers the STC4539 variant, as both devices belong to the same n&p pair enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Note: The manufacturer provides a single datasheet file (STC4539-StansonTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STC4539S8TG
Manufacturer Stanson Technology
File Size 444.79 KB
Description N&P Pair Enhancement Mode MOSFET
Datasheet download datasheet STC4539S8TG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 PART MARKING SOP-8 FEATURE N-Channel z 30V/6.8A, RDS(ON) = 34mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel z -30V/-6.2A, RDS(ON) = 60mΩ @VGS = -10V z -30V/-4.6A, RDS(ON)= 80mΩ @VGS = - 4.