STC4567S8RG Datasheet PDF | Stanson Technology

Stanson Technology STC4567S8RG

The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed.

Part No.	STC4567S8RG
Datasheet	STC4567S8RG Download
Manufacturer	Stanson Technology
Description	MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE N-Channel z 40V/6.0A, RDS(ON) = 48mΩ (Typ.) @VGS = 10V z 40V/5.0A, RDS(ON) = 63mΩ @VGS = 4.5V PART MARKING P-Channel z -40V/-7.2A, RDS(ON) = 90mΩ(Typ.) @VGS = -10V z -40V/-5.0A, RDS(ON)= 103mΩ @VGS = - 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package Y∶Year A∶Product code ORDERING INFORMATION Part Number Package Part Marking STC4567S8RG SOP-8 STC4567 ※ Process Code : A ~ Z ; a ~ z ※ STC4567S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STC4567 2008. V1 STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Symbol VDSS Typical NP 40 -40 Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction...