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STC4567S8RG - MOSFET

Download the STC4567S8RG datasheet PDF. This datasheet also covers the STC4567 variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STC4567-StansonTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STC4567S8RG
Manufacturer Stanson Technology
File Size 612.31 KB
Description MOSFET
Datasheet download datasheet STC4567S8RG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 FEATURE N-Channel z 40V/6.0A, RDS(ON) = 48mΩ (Typ.) @VGS = 10V z 40V/5.0A, RDS(ON) = 63mΩ @VGS = 4.5V PART MARKING P-Channel z -40V/-7.2A, RDS(ON) = 90mΩ(Typ.) @VGS = -10V z -40V/-5.0A, RDS(ON)= 103mΩ @VGS = - 4.