STC4567S8RG Datasheet PDF - Stanson Technology MOSFET Specs

STC4567S8RG - MOSFET

This page provides the datasheet information for the STC4567S8RG, a member of the STC4567 MOSFET family.

Datasheet Summary

Description

The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Datasheet Details

Part number	STC4567S8RG
Manufacturer	Stanson Technology
File Size	612.31 KB
Description	MOSFET
Datasheet	STC4567S8RG Datasheet
Additional preview pages of the STC4567S8RG datasheet.

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Full PDF Text Transcription

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STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 FEATURE N-Channel z 40V/6.0A, RDS(ON) = 48mΩ (Typ.) @VGS = 10V z 40V/5.0A, RDS(ON) = 63mΩ @VGS = 4.5V PART MARKING P-Channel z -40V/-7.2A, RDS(ON) = 90mΩ(Typ.) @VGS = -10V z -40V/-5.0A, RDS(ON)= 103mΩ @VGS = - 4.

Published: Sep 25, 2016 |