STC6602 datasheet by Stanson Technology.
| Part number | STC6602 |
|---|---|
| Datasheet | STC6602-StansonTechnology.pdf |
| File Size | 863.79 KB |
| Manufacturer | Stanson Technology |
| Description | 2.8A Dual N&P Channel Enhancement Mode MOSFET |
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The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook puter power management and other battery powered circuits, where high-side switching is required.
View all Stanson Technology datasheets
| Part Number | Description |
|---|---|
| STC6602ST6RG | 2.8A Dual N&P Channel Enhancement Mode MOSFET |
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