STC6602 Datasheet | Stanson Technology

Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook puter power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 FEATURE D1 S1 D2 02YW G1 S2 G2 Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STC6602ST6RG TSOP-6 02YW ※ Week Code Code : A ~ Z ; a ~ z ※...