Datasheet Summary
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
DESCRIPTION
The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook puter power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION SOP-8
FEATURE
N-Channel 60V/7.0A, RDS(ON) = 35mΩ(Typ.) @VGS = 10V 60V/4.0A, RDS(ON) = 40mΩ @VGS = 4.5V
PART MARKING
P-Channel...