The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
| Part number | STC6614 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 1.14 MB |
| Description | MOSFET |
| Datasheet |
 STC6614 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STC601F | NPN Silicon Transistor | AUK |
| STC603PI | NPN Silicon Transistor | AUK |
| STC6075Q | NPN Silicon Transistor | AUK |
| STC62WV1024 | VERY LOW POWER VOLTAGE CMOS SRAM | STC |
| STC62WV12816 | Very Low Power/Voltage CMOS SRAM | STC |
| Part Number | Description |
|---|---|
| STC6602 | 2.8A Dual N&P Channel Enhancement Mode MOSFET |
| STC6602ST6RG | 2.8A Dual N&P Channel Enhancement Mode MOSFET |
| STC4539 | N&P Pair Enhancement Mode MOSFET |
| STC4539S8RG | N&P Pair Enhancement Mode MOSFET |
| STC4539S8TG | N&P Pair Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
