STC6614 - MOSFET

Datasheet Summary

Description

The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Stanson Technology

📥 Download Datasheet

Datasheet Details

Part number	STC6614
Manufacturer	Stanson Technology
File Size	1.14 MB
Description	MOSFET
Datasheet	STC6614 Datasheet
Additional preview pages of the STC6614 datasheet.

📁 Similar Datasheet

STC601F - NPN Silicon Transistor (AUK)
STC603PI - NPN Silicon Transistor (AUK)
STC6075Q - NPN Silicon Transistor (AUK)
STC62WV1024 - VERY LOW POWER VOLTAGE CMOS SRAM (STC)
STC62WV12816 - Very Low Power/Voltage CMOS SRAM (STC)
STC62WV1M8 - Very Low Power/Voltage CMOS SRAM (STC)
STC62WV256 - VERY LOW POWER/VOLTAGE CMOS SRAM (STC)
STC62WV25616 - Very Low Power/Voltage CMOS SRAM (STC)
STC62WV2568 - Very Low Power/Voltage CMOS SRAM (STC)
STC62WV51216 - Very Low Power/Voltage CMOS SRAM (STC)

Other Datasheets by Stanson Technology

STC6602 - 2.8A Dual N&P Channel Enhancement Mode MOSFET
STC6602ST6RG - 2.8A Dual N&P Channel Enhancement Mode MOSFET
STC4539 - N&P Pair Enhancement Mode MOSFET
STC4539S8RG - N&P Pair Enhancement Mode MOSFET
STC4539S8TG - N&P Pair Enhancement Mode MOSFET
STC4567 - MOSFET
STC4567S8RG - MOSFET

Full PDF Text Transcription

Click to expand full text

STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 FEATURE N-Channel 60V/7.0A, RDS(ON) = 35mΩ(Typ.) @VGS = 10V 60V/4.0A, RDS(ON) = 40mΩ @VGS = 4.5V PART MARKING P-Channel -60V/-5.0A, RDS(ON) = 60mΩ(Typ.) @VGS = -10V -60V/-3.0A, RDS(ON)= 80mΩ @VGS = -4.

Published: Sep 25, 2016 |