Download the STC6602ST6RG datasheet PDF. This datasheet also covers the STC6602 variant, as both devices belong to the same 2.8a dual n&p channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STC6602ST6RG |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 863.79 KB |
| Description | 2.8A Dual N&P Channel Enhancement Mode MOSFET |
| Datasheet |
 STC6602ST6RG Datasheet
|
|
|
| Part Number | Description | Manufacturer |
|---|---|---|
| STC601F | NPN Silicon Transistor | AUK |
| STC603PI | NPN Silicon Transistor | AUK |
| STC6075Q | NPN Silicon Transistor | AUK |
| STC62WV1024 | VERY LOW POWER VOLTAGE CMOS SRAM | STC |
| STC62WV12816 | Very Low Power/Voltage CMOS SRAM | STC |
| Part Number | Description |
|---|---|
| STC6602 | 2.8A Dual N&P Channel Enhancement Mode MOSFET |
| STC6614 | MOSFET |
| STC4539 | N&P Pair Enhancement Mode MOSFET |
| STC4539S8RG | N&P Pair Enhancement Mode MOSFET |
| STC4539S8TG | N&P Pair Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
