Datasheet Summary
STC6602
Dual N&P Channel Enhancement Mode MOSFET
2.8A/-2.8A
DESCRIPTION
The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook puter power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSOP-6
FEATURE
D1 S1 D2
02YW
G1 S2 G2
Y: Year A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
TSOP-6
02YW
※ Week Code Code : A ~ Z ; a ~ z ※...