STC6602ST6RG datasheet by Stanson Technology.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | STC6602ST6RG |
|---|---|
| Datasheet | STC6602ST6RG STC6602 Datasheet (PDF) |
| File Size | 863.79 KB |
| Manufacturer | Stanson Technology |
| Description | 2.8A Dual N&P Channel Enhancement Mode MOSFET |
|
|
The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook puter power management and other battery powered circuits, where high-side switching is required.
View all Stanson Technology datasheets
| Part Number | Description |
|---|---|
| STC6602 | 2.8A Dual N&P Channel Enhancement Mode MOSFET |
| STC6614 | MOSFET |
| STC4539 | N&P Pair Enhancement Mode MOSFET |
| STC4539S8RG | N&P Pair Enhancement Mode MOSFET |
| STC4539S8TG | N&P Pair Enhancement Mode MOSFET |
| STC4567 | MOSFET |
| STC4567S8RG | MOSFET |
