STC6602ST6RG - 2.8A Dual N&P Channel Enhancement Mode MOSFET

This page provides the datasheet information for the STC6602ST6RG, a member of the STC6602 2.8A Dual N&P Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Stanson Technology

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Datasheet Details

Part number	STC6602ST6RG
Manufacturer	Stanson Technology
File Size	863.79 KB
Description	2.8A Dual N&P Channel Enhancement Mode MOSFET
Datasheet	STC6602ST6RG Datasheet
Additional preview pages of the STC6602ST6RG datasheet.

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Full PDF Text Transcription

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STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.

Published: Sep 25, 2016 |