The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
| Part number | STC4567 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 612.31 KB |
| Description | MOSFET |
| Datasheet |
 STC4567 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STC4516 | Complementary Dual Enhancement Mode MOSFET | Stanson |
| STC4545 | 30V Complementary MOSFET | Semtron |
| STC401 | NPN Silicon Transistor | AUK |
| STC401D | NPN Silicon Transistor | KODENSHI |
| STC401F | NPN Silicon Transistor | AUK |
| Part Number | Description |
|---|---|
| STC4567S8RG | MOSFET |
| STC4539 | N&P Pair Enhancement Mode MOSFET |
| STC4539S8RG | N&P Pair Enhancement Mode MOSFET |
| STC4539S8TG | N&P Pair Enhancement Mode MOSFET |
| STC6602 | 2.8A Dual N&P Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
