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STC4567 - MOSFET

Datasheet Summary

Description

The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STC4567
Manufacturer Stanson Technology
File Size 612.31 KB
Description MOSFET
Datasheet download datasheet STC4567 Datasheet
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STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 FEATURE N-Channel z 40V/6.0A, RDS(ON) = 48mΩ (Typ.) @VGS = 10V z 40V/5.0A, RDS(ON) = 63mΩ @VGS = 4.5V PART MARKING P-Channel z -40V/-7.2A, RDS(ON) = 90mΩ(Typ.) @VGS = -10V z -40V/-5.0A, RDS(ON)= 103mΩ @VGS = - 4.
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