Datasheet Summary
Power MOSFET
ETR1118_003
- GENERAL DESCRIPTION
The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
- APPLICATIONS
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems
- Features
Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
: Rds(on) = 0.16Ω@ Vgs = 2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
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