Datasheet Summary
N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT
- 23 Package
Applications Notebook PCs Cellular and portable phones On
- board power supplies Li
- ion battery systems
General Description
The XP151A12A2MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.1 Ω ( Vgs = 4.5V ) Rds (on) =...