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2SA1434 - Transistor

Key Features

  • Adoption of FBET process. High DC current gain (hFE=500 to 1200). +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dis.

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Datasheet Details

Part number 2SA1434
Manufacturer TY Semiconductor
File Size 88.41 KB
Description Transistor
Datasheet download datasheet 2SA1434 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product specification 2SA1434 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.