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WNM2025 - N-Channel MOSFET

General Description

The WNM2025 is N-Channel enhancement MOS Field Effect Transistor.

with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • z z z z z Trench Technology Supper high density cell design 1 3 W25.
  • 2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W25 = Device Code.
  • = Month (A~Z).

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Datasheet Details

Part number WNM2025
Manufacturer TY Semiconductor
File Size 295.99 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM2025 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23-3L Descriptions The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2025 is Pb-free. 1 G 2 S Pin configuration (Top view) Features z z z z z Trench Technology Supper high density cell design 1 3 W25* 2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W25 = Device Code * = Month (A~Z) Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc.