WNM2027 - N-Channel MOSFET

TY Semiconductor

General Description

The WNM2027 is N-Channel enhancement MOS Field Effect Transistor.

charge.

This device is suitable for use in DC-DC conversion and power switch applications.

Key Features

3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6.
2 = Device Code = Month (A~Z) Marking WT6.

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WNM2027 n-channel mosfet by TY Semiconductor - Datasheet Preview

Datasheet Details

Part number	WNM2027
Manufacturer	TY Semiconductor
File Size	126.57 KB
Description	N-Channel MOSFET
Datasheet	WNM2027 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET V(BR)DSS Rds(on) (Max. m) 45 @ 4.5V 55 @ 2.5V 66 @ 1.8V Id (A) 3.6 3.1 1.5 SOT-23 20 Descriptions The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate 1 G 2 S charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2027 is Pb-free. Configuration (Top View) Features 3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6 * 2 = Device Code = Month (A~Z) Marking WT6* Applications z z z z Driver for Relay, Solenoid, Motor, LED etc.