Datasheet4U Logo Datasheet4U.com

TP44110HB - 650V GaN Half-Bridge

Datasheet Summary

Description

The TP44110HB is a half-bridge IC consisting of two 650 V GaN HEMT power devices.

The low-side (LS) and the high-side (HS) devices are of 90 mΩ each.

This co-packaged solution minimizes inductance in the power loop enabling clean switching even at high-current high-frequency operations.

Features

  • 650 V enhancement mode power HEMTs.
  • RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side).
  • IDS: 19 A (max) / IDSpulse: 30 A (max).
  • Adjustable turn-on/off speed.
  • Reverse conduction capability.
  • Zero reverse-recovery loss.
  • High switching frequency capability.
  • Interfaces with 6 V and ≥12 V drivers (see.

📥 Download Datasheet

Datasheet preview – TP44110HB

Datasheet Details

Part number TP44110HB
Manufacturer Tagore
File Size 1.05 MB
Description 650V GaN Half-Bridge
Datasheet download datasheet TP44110HB Datasheet
Additional preview pages of the TP44110HB datasheet.

📁 Similar Datasheet

  • TP4045C - Photovoltaic Solar Cell Protection Schottky Diode (HY)
  • TP4054 - Standalone Linear Li-lon Battery Charger (NanJing Top Power)
  • TP4055 - 500mA Linear Li-Ion Battery Charger (NanJing Top Power)
  • TP4055C - 30mA-600mA linear lithium-ion battery charger (ChipSourceTek)
  • TP4056 - 1A linear lithium-ion battery charger (UMW)
  • TP4056 - 1A Standalone Linear Li-lon Battery Charger (NanJing Top Power)
  • TP4056 - 1A lithium battery charger (TPOWER)
  • TP4056 - 1A Linear Li-Ion Battery Charger (Chipown)
  • TP4057 - 500mA Linear Li-Ion Battery Charger (NanJing Top Power)
  • TP4057 - 500mA linear lithium ion battery charger (UMW)
Other Datasheets by Tagore

Full PDF Text Transcription

Click to expand full text
TP44110HB TP44110HB – 650 V GaN Half-Bridge, 90 mΩ (LS) and 90 mΩ (HS) 1.0 Features • 650 V enhancement mode power HEMTs • RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side) • IDS: 19 A (max) / IDSpulse: 30 A (max) • Adjustable turn-on/off speed • Reverse conduction capability • Zero reverse-recovery loss • High switching frequency capability • Interfaces with 6 V and ≥12 V drivers (see Application Information) • Low-side thermal-pad LV-isolated from the source for better thermal connection even with current-sense resistors (Top View) (Bottom View) Figure 1 Device Image (30 pin 8×10×0.8 mm QFN Package) 2.
Published: |