- Part: TP44110HB
- Description: 650V GaN Half-Bridge
- Manufacturer: Tagore
- Size: 1.05 MB
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TP44110HB Key Features
- 650 V enhancement mode power HEMTs
- RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side)
- IDS: 19 A (max) / IDSpulse: 30 A (max)
- Adjustable turn-on/off speed
- Reverse conduction capability
- Zero reverse-recovery loss
- High switching frequency capability
- Interfaces with 6 V and ≥12 V drivers (see Application
- Low-side thermal-pad LV-isolated from the source for better
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