• Part: TP44110HB
  • Description: 650V GaN Half-Bridge
  • Manufacturer: Tagore
  • Size: 1.05 MB
TP44110HB Datasheet (PDF) Download
Tagore
TP44110HB

Description

Drain of the high-side HEMT.

Key Features

  • 650 V enhancement mode power HEMTs
  • RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side)
  • IDS: 19 A (max) / IDSpulse: 30 A (max)
  • Adjustable turn-on/off speed
  • Reverse conduction capability
  • Zero reverse-recovery loss
  • High switching frequency capability
  • Interfaces with 6 V and ≥12 V drivers (see Application Information)
  • Ac-dc, dc-dc, dc-ac converters
  • Totem-pole and bi-directional PFCs