Tagore TP44110HB
The TP44110HB is a half-bridge IC consisting of two 650 V GaN HEMT power devices. The low-side (LS) and the high-side (HS) devices are of 90 mΩ each. This co-packaged solution minimizes inductance in the power loop enabling clean switching even at high-current high-frequency operations.| Part No. | TP44110HB |
|---|---|
| Datasheet | TP44110HB Download |
| Manufacturer | Tagore |
| Description | 650V GaN Half-Bridge |
| Buy | Stock & Price |
FEATURES
● 650 V enhancement mode power HEMTs● RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side)
● IDS: 19 A (max) / IDSpulse: 30 A (max)
● Adjustable turn-on/off speed
● Reverse conduction capability
● Zero reverse-recovery loss
● High switching frequency capability
● Interfaces with 6 V and ≥12 V drivers (see Application Information)
● Low-side thermal-pad LV-isolated from the source for better thermal connection even with current-sense resistors (Top View) (Bottom View) Figure 1 Device Image (30 pin 8×10×0.8 mm QFN Package) 2.0 Topologies and
APPLICATIONS
● Ac-dc, dc-dc, dc-ac converters● Totem-pole and bi-directional PFCs
● Half- and full-bridge LLC converters
● High-frequency electronic transformers
● Mobile chargers and laptop adapters
● EV chargers and power tools
● LED and motor drives
● Server power supplies RoHS/REACH/Halogen Free Compliance 3.0
DESCRIPTION
As provided in the application information, simple external interface circuits can be used to drive this part both from dedicated 6 V GaN drivers as well as more traditional 12 V drivers.
