TP44110HB Overview
The TP44110HB is a half-bridge IC consisting of two 650 V GaN HEMT power devices. The low-side (LS) and the high-side (HS) devices are of 90 mΩ each. This co-packaged solution minimizes inductance in the power loop enabling clean switching even at high-current high-frequency operations.
TP44110HB Key Features
- 650 V enhancement mode power HEMTs
- RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side)
- IDS: 19 A (max) / IDSpulse: 30 A (max)
- Adjustable turn-on/off speed
- Reverse conduction capability
- Zero reverse-recovery loss
- High switching frequency capability
- Interfaces with 6 V and ≥12 V drivers (see Application
- Low-side thermal-pad LV-isolated from the source for better