TSM2310 - 20V N-Channel MOSFET

Taiwan Semiconductor Company

General Description

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Key Features

Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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TSM2310 20v n-channel mosfet by Taiwan Semiconductor Company - Datasheet Preview

Datasheet Details

Part number	TSM2310
Manufacturer	Taiwan Semiconductor Company
File Size	263.29 KB
Description	20V N-Channel MOSFET
Datasheet	TSM2310 Datasheet

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Full PDF Text Transcription (Reference)

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20V N-Channel MOSFET SOT-23 www.DataSheet4U.com TSM2310 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V ID (A) 4 3.2 2.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM2310CX RF Package SOT-23 Packing 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V Pulsed Drain Current, VGS @4.