TSM2310 Overview
20V N-Channel MOSFET SOT-23 .. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V ID (A) 4 3.2 2.0.
TSM2310 Key Features
- Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
- Load Switch PA Switch