Datasheet Summary
20V N-Channel MOSFET
SOT-23
..
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V
ID (A)
4 3.2 2.0
Features
- - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
- - Load Switch PA Switch
Ordering Information
Part No.
TSM2310CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel N-Channel...