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TSM2313 - 20V P-Channel MOSFET

General Description

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Key Features

  • SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain ID (A) -3.3 -2.0 -1.0 Block Diagram.
  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance.

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Datasheet Details

Part number TSM2313
Manufacturer Taiwan Semiconductor Company
File Size 393.94 KB
Description 20V P-Channel MOSFET
Datasheet download datasheet TSM2313 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM2313 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 70 @ VGS = -4.5V -20 90 @ VGS = -2.5V 130 @ VGS = -1.8V www.DataSheet4U.com Features SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain ID (A) -3.3 -2.0 -1.0 Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch PA Switch P-Channel MOSFET Ordering Information Part No. TSM2313CX RF Package SOT-23 Packing 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.