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TSM2318 - 40V N-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM2318
Manufacturer Taiwan Semiconductor Company
File Size 261.20 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet TSM2318 Datasheet

Full PDF Text Transcription (Reference)

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40V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain www.DataSheet4U.com TSM2318 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 40 45 @ VGS = 10V 62.5 @ VGS = 4.5V ID (A) 3.9 3.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch Stepper Motors Ordering Information Part No.