Datasheet Summary
20V P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS =
- 20V RDS (on), Vgs @
- 4.5V, Ids @
- 4.0A = 55mΩ RDS (on), Vgs @
- 2.5V, Ids @
- 2.5A = 85mΩ
..
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities pact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No. TSM2311CX Packing Tape & Reel Package...