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TSM2311 Datasheet 20v P-channel Enhancement Mode MOSFET

Manufacturer: Taiwan Semiconductor Company

Overview: TSM2311 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ www.DataSheet4U.

Key Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2311CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature.

More Datasheets from Taiwan Semiconductor Company

Part Number Description
TSM2310 20V N-Channel MOSFET
TSM2312 20V N-Channel Enhancement Mode MOSFET
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TSM2318 40V N-Channel MOSFET
TSM2301 20V P-Channel Enhancement Mode MOSFET
TSM2301B 20V P-Channel MOSFET
TSM2302 20V N-Channel Enhancement Mode MOSFET
TSM2306 30V N-Channel MOSFET
TSM2307 30V P-Channel MOSFET
TSM2320 20V N-Channel Enhancement Mode MOSFET

TSM2311 Distributor