Datasheet Summary
20V N-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
Parameter
Value
VDS VGS = 4.5V
RDS(on) (max) VGS = 2.5V VGS = 1.8V
Qg
20 33 40 51 11
Unit V mΩ nC
Features
- Advance Trench Process Technology
- High Density Cell Design for Ultra Low On-resistance
Application
- Load Switch
- PA Switch
Ordering Information
Part No.
Package
Packing
TSM2312CX RF
SOT-23
3kpcs / 7” Reel
TSM2312CX RFG SOT-23
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony pounds
Block Diagram
N-Channel...
