TSM2312 Overview
TSM2312 20V N-Channel MOSFET SOT-23 Pin Definition: Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V RDS(on) (max) VGS = 2.5V VGS = 1.8V Qg 20 33 40 51 11 Unit V mΩ.
TSM2312 Key Features
- Advance Trench Process Technology
- High Density Cell Design for Ultra Low On-resistance
- Load Switch
- PA Switch
