TSM2312 - 20V N-Channel Enhancement Mode MOSFET

Taiwan Semiconductor Company

General Description

only.

No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

Advance Trench Process Technology.
High Density Cell Design for Ultra Low On-resistance.

📥 Download Datasheet

TSM2312 20v n-channel enhancement mode mosfet by Taiwan Semiconductor Company - Datasheet Preview

Datasheet Details

Part number	TSM2312
Manufacturer	Taiwan Semiconductor Company
File Size	672.01 KB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	TSM2312 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TSM2312CX	N-Channel 20V MOSFET	VBsemi
TSM2314	20V N-Channel MOSFET	Taiwan Semiconductor
TSM2301A	20V P-Channel MOSFET	Taiwan Semiconductor
TSM2302CX	N-Channel Power MOSFET	Taiwan Semiconductor
TSM2303	P-Channel Power MOSFET	Taiwan Semiconductor

Other Datasheets by Taiwan Semiconductor Company

Part Number	Description
TSM2310	20V N-Channel MOSFET
TSM2311	20V P-Channel Enhancement Mode MOSFET
TSM2313	20V P-Channel MOSFET
TSM2318	40V N-Channel MOSFET
TSM2301	20V P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TSM2312 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V RDS(on) (max) VGS = 2.5V VGS = 1.8V Qg 20 33 40 51 11 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No.