TSM3457 Datasheet | Taiwan Semiconductor

30V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Key Parameter Performance Parameter Value RDS(on) (max) VGS = -10V VGS = -4.5V -30 60 100 Qg 9.52 Unit V mΩ nC Features - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance Ordering Information Part No. Package Packing TSM3457CX6 RFG SOT-26 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony...