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TSM3481 - 30V P-Channel MOSFET

Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance.

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Datasheet Details

Part number TSM3481
Manufacturer Taiwan Semiconductor Company
File Size 523.58 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet TSM3481 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM3481 30V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 48 @ VGS = -10V -30 79 @ VGS = -4.5V ID (A) -5.3 -4.1 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● DC-DC Conversion ● Asynchronous Buck Converter Ordering Information Block Diagram Part No.
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