TSM3900D Datasheet | Taiwan Semiconductor

Features - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance Block Diagram Application - Load Switch - PA Switch Ordering Information ID (A) 2.0 1.5 1.0 Part No. Package TSM3900DCX6 RF SOT-26 Packing T&R Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25ºC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation Ta = 25ºC Ta = 70ºC VDS VGS ID IDM IS Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance...