TSM3911D Datasheet | Taiwan Semiconductor

Features - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance Ordering Information Block Diagram Part No. Package Packing TSM3911DCX6 RF SOT-26 3kpcs / 7” Reel TSM3911DCX6 RFG SOT-26 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony pounds Dual P-Channel MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1,2) Maximum Power Dissipation Operating Junction...