TSM4420 Description
N-Channel Enhancement Mode MOSFET VDS = 25V ID = 13.5A RDS (on), Vgs @ 10V, Ids @ 13.5A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 11A = 11mΩ.
TSM4420 Key Features
- Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Vo