TSM4420 Datasheet | Taiwan Semiconductor

Features - Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current - - Block Diagram Ordering Information Part No. TSM4420CS Packing Package SOP-8 Tape & Reel (2,500pcs / Reel) Absolute Maximum Rating (TA = 25 o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C o o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit 25 ±20 13.5 50 2 1.3 +150 -55 to +150 Unit W o o Thermal Performance Parameter Junction-to-case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2 2. 1-in 2oz Cu PCB board Symbol Rθjc Rθja Limit 2.2 50 Unit o C/W 1-3 2005/08 rev. B .. Electrical Characteristics TJ = 25 C, unless otherwise noted o Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Conditions Symbol Min Typ Max Unit...