TSM4425 Datasheet | Taiwan Semiconductor

Features - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance Block Diagram Application - Load Switches d - Notebook PCs e - Desktop PCs d Ordering Information en Part No. Package Packing TSM4425CS RLG SOP-8 2.5Kpcs / 13” Reel m Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and m <1000ppm antimony pounds o Absolute Maximum Rating (TC = 25°C unless otherwise noted) ec Parameter Symbol Drain-Source Voltage R Gate-Source Voltage VGS t Continuous Drain Current ID o Pulsed Drain Current N Continuous Source Current (Diode Conduction)a,b P-Channel MOSFET Limit -30 ±20 -11 -50 -2.1 Ta = 25°C Maximum Power Dissipation Ta = 75°C Operating Junction Temperature +150 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 Thermal Performance Parameter Junction to Foot Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJF...