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TSM4425 - 30V P-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4425
Manufacturer Taiwan Semiconductor Company
File Size 314.70 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet TSM4425 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM4425 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 14 @ VGS = -10V -30 20 @ VGS = -4.5V Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● Load Switches d ● Notebook PCs e ● Desktop PCs d Ordering Information en Part No. Package Packing TSM4425CS RLG SOP-8 2.