TSM4426 Datasheet | Taiwan Semiconductor

Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. TSM4426CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 20 ±12 8 30 1.7 1.6 1.1 +150 -55 to +150 Unit V V A A A W o o Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJC RӨJA Limit 40 77 Unit o o C/W C/W 1/6 Version: A07 20V Dual N-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b .. Conditions VGS = 0V, ID = 250u A VDS = VGS, ID = 250u A VGS = ±12V, VDS = 0V VDS = 20V, VGS = 0V VDS =5V, VGS = 4.5V VGS = 4.5V, ID = 8.0A VGS = 2.5V, ID = 6.0A VDS = 10V, ID = 6A IS = 1.7A, VGS =...