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TSM4426 - 20V Dual N-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4426
Manufacturer Taiwan Semiconductor Company
File Size 399.00 KB
Description 20V Dual N-Channel MOSFET
Datasheet download datasheet TSM4426 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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20V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 25 @ VGS = 4.5V 35 @ VGS = 2.5V www.DataSheet4U.com TSM4426 SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) 8.0 6.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. TSM4426CS RL Package SOP-8 Packing 2.