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TSM4431 - 30V P-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4431
Manufacturer Taiwan Semiconductor Company
File Size 370.00 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet TSM4431 Datasheet

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www.DataSheet4U.com TSM4431 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 40 @ VGS = -10V 70 @ VGS = -4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) -5.8 -4.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Asynchronous Buck Converter P-Channel MOSFET Ordering Information Part No.