TSM4431 Datasheet | Taiwan Semiconductor

Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - DC-DC Conversion Asynchronous Buck Converter P-Channel MOSFET Ordering Information Part No. TSM4431CS RL Package SOP-8 Packing T&R Absolute Maximum Rating (Ta = 25 o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS Limit -30 ±20 -5.8 -20 -2.3 Unit V V A A A W o o Ta = 25 C Ta = 75 C 2.5 1.6 +150 - 55 to +150 TJ TJ, TSTG Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJC RӨJA Limit 30 50 Unit o o C/W C/W 1/6 Version:...