TSM4433D Datasheet | Taiwan Semiconductor

Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - DC-DC Conversion Asynchronous Buck Converter Ordering Information Part No. TSM4433DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual P-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -20 ±8 -3.9 -10 -1.2 2.5 1.3 +150 - 55 to +150 Unit V V A A A W o o Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJF RӨJA Limit 19 40 Unit o o C/W C/W 1/6 Version: A07 20V Dual P-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a .. Conditions...