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TSM4433 - 20V P-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4433
Manufacturer Taiwan Semiconductor Company
File Size 400.15 KB
Description 20V P-Channel MOSFET
Datasheet download datasheet TSM4433 Datasheet

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www.DataSheet4U.com TSM4433 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 90 @ VGS = -4.5V -20 110 @ VGS = -2.5V 150 @ VGS = -1.8V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) -3.9 -3.2 -2.6 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Asynchronous Buck Converter P-Channel MOSFET Ordering Information Part No. TSM4433CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.