TSM4N80 Datasheet N-Channel Power MOSFET

Manufacturer: Taiwan Semiconductor

TSM4N80 n-channel power mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM4N80
Manufacturer	Taiwan Semiconductor
File Size	358.27 KB
Description	N-Channel Power MOSFET
Datasheet	TSM4N80 Datasheet

General Description

The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.

Overview

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.

Gate 2.

Drain 3.

Key Features

Low RDS(ON) 3Ω (Max. ) Low gate charge typical @ 25nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM4N80CZ C0 TSM4N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Cu.

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