TSM4N90 Description
The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
TSM4N90 Key Features
- Low RDS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability