Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
500V, 4A, 2.7Ω
Features
- 100% UIS and Rg tested
- Advanced planar process
- pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
500 V 2.7 Ω 12 nC
APPLICATIONS
- AC/DC LED Lighting
- Power Supply
- Charger
TO-252 (DPAK)
Notes: MSL 3 (Moisture Sensitivity Level) per...