TSM3911D Datasheet | Taiwan Semiconductor

20V Dual P-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 Key Parameter Performance Parameter Value VDS VGS = -4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V -20 140 200 300 Qg 15.23 Unit V mΩ nC Features - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance Ordering Information Block Diagram Part No. Package Packing TSM3911DCX6 RF SOT-26 3kpcs / 7” Reel TSM3911DCX6...