TSM4420 Datasheet | Taiwan Semiconductor

Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain Preliminary .. N-Channel Enhancement Mode MOSFET VDS = 25V ID = 13.5A RDS (on), Vgs @ 10V, Ids @ 13.5A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 11A = 11mΩ Features - Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current - - Block Diagram Ordering Information Part No. TSM4420CS Packing Package SOP-8 Tape & Reel (2,500pcs /...