1SS293
1SS293 is Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
Low Voltage High Speed Switching
Low forward voltage Low reverse surrent Small package
: VF (3) = 0.54V (typ.) : IR = 5µA (max)
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range
Symbol
VRM VR IFM IO P Tj Tstg
Rating
Unit
45 V
40 V
300 m A
100 m A
300 m W JEDEC
125 °C EIAJ
- 55~125 °C TOSHIBA
Weight: 0.13g
― SC- 61 2- 3J1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (3)
IR CT
Test Circuit
Test Condition
― IF = 1m A
― IF = 10m A
― IF = 100m A
― VR = 40V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
― 0.54...
