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1SS293 - Diode

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Part number 1SS293
Manufacturer Toshiba Semiconductor
File Size 130.62 KB
Description Diode
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TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Low forward voltage Low reverse surrent Small package : VF (3) = 0.54V (typ.) : IR = 5µA (max) 1SS293 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Symbol VRM VR IFM IO P Tj Tstg Rating Unit 45 V 40 V 300 mA 100 mA 300 mW JEDEC 125 °C EIAJ −55~125 °C TOSHIBA Weight: 0.
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