The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293
Low Voltage High Speed Switching
Low forward voltage Low reverse surrent Small package
: VF (3) = 0.54V (typ.) : IR = 5µA (max)
1SS293
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range
Symbol
VRM VR IFM IO P Tj Tstg
Rating
Unit
45 V
40 V
300 mA
100 mA
300 mW JEDEC
125 °C EIAJ −55~125 °C TOSHIBA
Weight: 0.
1SS293 Datasheet
