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1SS379 - Silicon Epitaxial Schottky Barrie Diode

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Datasheet Details

Part number 1SS379
Manufacturer Toshiba
File Size 760.12 KB
Description Silicon Epitaxial Schottky Barrie Diode
Datasheet download datasheet 1SS379 Datasheet

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications 1SS379 Unit: mm  AEC-Q101 Qualified (Note1)  Small package : SC-59  Low forward voltage : VF = 1.0 V (typ.)  Low reverse current : IR = 0.1 nA (typ.)  Small total capacitance : CT = 3.0 pF (typ.) Note1: For detail information, please contact our sales.