1SS379
1SS379 is Silicon Epitaxial Schottky Barrie Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
General Purpose Rectifier Applications
Unit: mm
- AEC-Q101 Qualified (Note1)
- Small package
: SC-59
- Low forward voltage
: VF = 1.0 V (typ.)
- Low reverse current
: IR = 0.1 n A (typ.)
- Small total capacitance : CT = 3.0 p F (typ.)
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
- m A
Average forward current
- m A
Surge current (10ms)
IFSM
2-
Power dissipation
PD (Note 2, 4)
200 m W
PD (Note 3)
Junction temperature
Tj (Note...
