1SS398
1SS398 is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
High-Voltage, High-Speed Switching Applications
Unit: mm
- Small package
: SC-59
- Low forward voltage
: VF(2) = 1.0 V (typ.)
- Fast reverse recovery time : trr = 0.5 μs (typ.)
- Small total capacitance : CT = 2.5 p F (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
- m A
Average forward current
- m A
Surge current (10ms)
IFSM
2-
Power dissipation
PD (Note 1, 3)
200 m W
PD (Note 2)
Junction temperature Storage temperature range
Tj (Note 1)
°C
Tj (Note 2)
Tstg (Note...
